We have developed undoped (1 0 0) GaAs/Al 0.34 Ga 0.66 As heterostructures, in which a 2D hole system is introduced by a heavily carbon doped field effect gate. We compare transport and mobility data from these (1 0 0) undoped devices with conventional Si modulation doped p-type devices grown on (3
Ballistic induced hole quantum wires fabricated on a (1 0 0)-oriented AlGaAs/GaAs heterostructure
β Scribed by J.C.H. Chen; O. Klochan; A.P. Micolich; A.R. Hamilton; D. Reuter; A.D. Wieck
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 295 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
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