Correlation between electron spin relaxation time and hetero-interface roughness in (1 1 0)-oriented GaAs/AlGaAs multiple-quantum wells
✍ Scribed by Satoshi Iba; Hiroshi Fujino; Toshiyasu Fujimoto; Shinji Koh; Hitoshi Kawaguchi
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 620 KB
- Volume
- 41
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
The correlation between the electron spin relaxation time t s and the hetero-interface roughness in (11 0)-oriented GaAs/AlGaAs multiple-quantum wells (MQWs) was investigated using growth interruption during molecular beam epitaxy growth. t s was characterized using polarization-and time-resolved PL measurements, and the hetero-interface roughness was evaluated by the full-widthat-half-maximum of the PL spectra at 4 K. It was found that t s in the MQWs with smooth interfaces became longer and the temperature dependence of t s changed from t s $T 0.6 -T 0.9 when the interface roughness was reduced using growth interruption. These results indicate that the structure inversion asymmetry term of the D'yakonov-Perel' mechanism was suppressed in the MQWs with smooth heterointerfaces.