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Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (1 0 0) InP substrates

✍ Scribed by Z.C. Lin; S.D. Lin; C.P. Lee

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 510 KB
Volume: 40
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2007.07.005

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✦ Synopsis

Stacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (MBE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-wires in InGaAs matrix were vertically aligned to form a rectangular lattice. In contrast, in InAlAs matrix, the stacked InAs quantum-wires were cross-correlated to form a bcc like lattice. Clear composition modulation was observed in the post-grown matrix material. Based on this result, a kinetic growth model is proposed to explain the stacking behavior of the quantum-wires.

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Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (1&#xa0;0&#xa0;0) InP substrates

✦ Synopsis

Ordering of stacked InAs/GaAs quantum-wires in InAlAs/InGaAs matrix on (1 0 0) InP substrates