Stacked and wire-like InAs/GaAs nanostructures in InGaAs/InAlAs matrix on InP substrates were grown by molecular beam epitaxy (MBE) and investigated by atomic force microscope (AFM) and transmission electron microscope (TEM). Cross-sectional TEM images showed that the stacked InAs and GaAs quantum-w
Capacitance–voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1)
✍ Scribed by O. Saad; M. Baira; R. Ajjel; H. Maaref; B. Salem; G. Brémond; M. Gendry
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 166 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0026-2692
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