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Raman investigation of low temperature AlGaAs/GaAs(1 0 0) heterostructures

โœ Scribed by P.V. Seredin; A.V. Glotov; E.P. Domashevskaya; I.N. Arsentyev; D.A. Vinokurov; I.S. Tarasov


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
289 KB
Volume
405
Category
Article
ISSN
0921-4526

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(1 0 0) GaAs/AlxGa1โˆ’xAs hetero
โœ K. Trunov; D. Reuter; A. Ludwig; J.C.H. Chen; O. Klochan; A.P. Micolich; A.R. Ha ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 729 KB

We have developed undoped (1 0 0) GaAs/Al 0.34 Ga 0.66 As heterostructures, in which a 2D hole system is introduced by a heavily carbon doped field effect gate. We compare transport and mobility data from these (1 0 0) undoped devices with conventional Si modulation doped p-type devices grown on (3