We have developed undoped (1 0 0) GaAs/Al 0.34 Ga 0.66 As heterostructures, in which a 2D hole system is introduced by a heavily carbon doped field effect gate. We compare transport and mobility data from these (1 0 0) undoped devices with conventional Si modulation doped p-type devices grown on (3
Structural and optical investigations of AlxGa1−xAs:Si/GaAs(1 0 0) MOCVD heterostructures
✍ Scribed by P.V. Seredin; A.V. Glotov; E.P. Domashevskaya; I.N. Arsentyev; D.A. Vinokurov; I.S. Tarasov
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 953 KB
- Volume
- 405
- Category
- Article
- ISSN
- 0921-4526
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