Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates

✍ Scribed by Gao, Haiyong ;Yan, Fawang ;Zhang, Yang ;Li, Jinmin ;Zeng, Yiping ;Wang, Guohong

• Book ID: 105364556
• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 581 KB
• Volume: 205
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200723540

✦ Synopsis

Abstract

Sapphire substrates were nanopatterned by dry (inductively coupled plasma, ICP) etching to improve the performance of GaN‐based light‐emitting diodes (LEDs). GaN‐based LEDs on nanopatterned sapphire substrates (NPSS) were fabricated by metal organic chemical vapor deposition (MOCVD). The characteristics of LEDs fabricated on NPSS prepared by dry etching were studied. The light output power and wall‐plug efficiency of the LEDs fabricated on NPSS were greater than those of the conventional LEDs fabricated on common planar sapphire substrates when the injection currents were the same. The LEDs on NPSS and common planar sapphire substrates have similar I –V characteristics. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)