Laser lift-off technique and the re-utilization of GaN-based LED films grown on sapphire substrate

Structural analysis of ELO-GaN grown on

Structural analysis of ELO-GaN grown on a sapphire substrate as the underlying layer of a GaN-based laser diode

✍ Miyajima, Takao ;Takeda, Shingo ;Tsusaka, Yoshiyuki ;Matsui, Junji ;Kudo, Yoshih 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 206 KB

## Abstract Using micro‐beam X‐ray diffraction (XRD), small __c__‐axis tilting was observed in maskless epitaxially laterally overgrown GaN (ELO‐GaN), which is a suitable underlying layer for realizing a reliable GaN‐based blue‐violet laser diode. By analyzing the micro‐scale structure of ELO‐GaN w