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Growth and Characterizations of GaN-Based LEDs Grown on Wet-Etched Stripe-Patterned Sapphire Substrates

✍ Scribed by Kar Wei Ng; Jung Min Hwang; Kei May Lau


Book ID
107455225
Publisher
Springer US
Year
2008
Tongue
English
Weight
438 KB
Volume
37
Category
Article
ISSN
0361-5235

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## Abstract Sapphire substrates were nanopatterned by dry (inductively coupled plasma, ICP) etching to improve the performance of GaN‐based light‐emitting diodes (LEDs). GaN‐based LEDs on nanopatterned sapphire substrates (NPSS) were fabricated by metal organic chemical vapor deposition (MOCVD). Th