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Growth of {11-22} GaN on shallowly etched r -plane patterned sapphire substrates

✍ Scribed by Hiroshi Furuya; Narihito Okada; Kazuyuki Tadatomo

Book ID
112182248
Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
621 KB
Volume
9
Category
Article
ISSN
1862-6351

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Green light-emitting diodes fabricated o
Green light-emitting diodes fabricated on semipolar (11-22) GaN on r-plane patterned sapphire substrate
✍ Okada, Narihito ;Uchida, Katsumi ;Miyoshi, Seita ;Tadatomo, Kazuyuki πŸ“‚ Article πŸ“… 2012 πŸ› John Wiley and Sons 🌐 English βš– 339 KB

## Abstract We have succeeded in the growth of a high‐quality semipolar (11–22) GaN layer on an __r__‐plane patterned sapphire substrate (__r__‐PSS). In this study, we report on green‐light‐emitting diodes (LEDs) fabricated on the (11–22) GaN layer on the __r__‐PSS. The optical property of (11–22)