Epitaxy of m-plane GaN on nanoscale patterned c-plane sapphire substrates
β Scribed by Yu-Sheng Lin; Kung-Hsuan Lin; Yu-Ming Chang; J. Andrew Yeh
- Book ID
- 116896820
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 714 KB
- Volume
- 606
- Category
- Article
- ISSN
- 0039-6028
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## Abstract InGaN/GaN quantum wells (QWs) grown at identical conditions on __m__βplane GaN and __c__βplane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with __m__β and __c__βpla
As a novel substrate, nearly lattice-matched to GaN and coincident with its crystallographic symmetry, M-plane sapphire is shown to be promising by evaluating the characteristics of GaN epitaxial films grown on this substrate using a two-step growth process. For M-plane sapphire, the tilt of a wafer