Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates
β Scribed by Meng-Hung Lin; Hua-Chiang Wen; Chih-Yung Huang; Yeau-Ren Jeng; Wei-Hung Yau; Wen-Fa Wu; Chang-Pin Chou
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 267 KB
- Volume
- 256
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Optical anisotropy in the growth plane has been observed by reflectance and photoluminescence (PL) spectroscopy on nitride epilayers grown on A-plane sapphire. This anisotropy results from the strongly anisotropic thermal strain which is such that the wurtzite symmetry goes from C 6v to C 2v . Time-
The optimal conditions of p-type activation for nonpolar a-plane (1 1 -2 0) p-type GaN films on r-plane (1 -1 0 2) sapphire substrates with various off-axis orientations have been investigated. Secondary ion mass spectrometry (SIMS) measurements show that Mg doping concentrations of 6.58 Γ 10 19 cm