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Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates

✍ Scribed by Meng-Hung Lin; Hua-Chiang Wen; Chih-Yung Huang; Yeau-Ren Jeng; Wei-Hung Yau; Wen-Fa Wu; Chang-Pin Chou


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
267 KB
Volume
256
Category
Article
ISSN
0169-4332

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Optical anisotropy in the growth plane has been observed by reflectance and photoluminescence (PL) spectroscopy on nitride epilayers grown on A-plane sapphire. This anisotropy results from the strongly anisotropic thermal strain which is such that the wurtzite symmetry goes from C 6v to C 2v . Time-

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The optimal conditions of p-type activation for nonpolar a-plane (1 1 -2 0) p-type GaN films on r-plane (1 -1 0 2) sapphire substrates with various off-axis orientations have been investigated. Secondary ion mass spectrometry (SIMS) measurements show that Mg doping concentrations of 6.58 Γ‚ 10 19 cm