๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

โœ Scribed by Zhiwei Li; Hongyuan Wei; Xiaoqing Xu; Guijuan Zhao; Xianglin Liu; Shaoyan Yang; Qinsheng Zhu; Zhanguo Wang

Book ID
116630295
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
864 KB
Volume
348
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Nanowire-Templated Lateral Epitaxial Gro
Nanowire-Templated Lateral Epitaxial Growth of Low-Dislocation Density Nonpolar a-Plane GaN on r-Plane Sapphire
โœ Qiming Li; Yong Lin; J. Randall Creighton; Jeffrey J. Figiel; George T. Wang ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 524 KB

Blue-and green-light-emitting diodes (LEDs) based on InGaN/ GaN films that are typically grown along the polar c-axis suffer from strong polarization-related internal electric fields that limit the radiative recombination efficiency due to spatial separation of holes and electrons. LEDs based on no