Blue-and green-light-emitting diodes (LEDs) based on InGaN/ GaN films that are typically grown along the polar c-axis suffer from strong polarization-related internal electric fields that limit the radiative recombination efficiency due to spatial separation of holes and electrons. LEDs based on no
Growth of a-plane AlN on r-plane sapphire by plasma source molecular beam epitaxy
β Scribed by Yuri Danylyuk; Soma Perooly; Md. Rahman; Gregory Auner
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 167 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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π SIMILAR VOLUMES
a-Plane GaN templates were grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a-plane GaN layers were grown at different growth temperatures on the a-plane GaN templates by plasma-assisted molecular beam epitaxy (PA-MBE). In order to investigate the effe
## Abstract Crystal epilayers of (111)βoriented GaAs have been grown successfully on sapphire (0001) substrates by molecular beam epitaxy. Although the epilayers were found to have a very high twin density, large areas (cm^2^) with no grain boundaries were observed. Both substrate surface preparati