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Growth of a-plane AlN on r-plane sapphire by plasma source molecular beam epitaxy

✍ Scribed by Yuri Danylyuk; Soma Perooly; Md. Rahman; Gregory Auner


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
167 KB
Volume
2
Category
Article
ISSN
1862-6351

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## Abstract Crystal epilayers of (111)‐oriented GaAs have been grown successfully on sapphire (0001) substrates by molecular beam epitaxy. Although the epilayers were found to have a very high twin density, large areas (cm^2^) with no grain boundaries were observed. Both substrate surface preparati