𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods

✍ Scribed by Shih-Chun Ling; Chu-Li Chao; Jun-Rong Chen; Po-Chun Liu; Tsung-Shine Ko; Tien-Chang Lu; Hao-Chung Kuo; Shing-Chung Wang; Shun-Jen Cheng; Jenq-Dar Tsay

Book ID
108165986
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
396 KB
Volume
312
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Improved quality nonpolara-plane GaN/AlG
Improved quality nonpolara-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)
✍ Imer, Bilge ;Schmidt, Matt ;Haskell, Ben ;Rajan, Siddharth ;Zhong, Barry ;Kim, K πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 436 KB

## Abstract High quality nonpolar __a__ ‐plane GaN templates were grown by utilizing sidewall lateral epitaxial overgrowth (SLEO) technique with threading dislocation density of ∼10^6^–10^7^ cm^–2^. 360 nm GaN/AlGaN multiple quantum well ultraviolet light emitting diodes were grown with metalorgani

Epitaxial lateral overgrowth of GaN on s
Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask
✍ Sang-il Kim; Bumjoon Kim; Samseok Jang; A-young Kim; Jihun Park; Dongjin Byun πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 791 KB

Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography i