Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates
β Scribed by Huei-Min Huang; Shih-Chun Ling; Wei-Wen Chan; Tien-Chang Lu; Hao-Chung Kuo; Shing-Chung Wang
- Book ID
- 114566035
- Publisher
- IEEE
- Year
- 2011
- Tongue
- English
- Weight
- 681 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0018-9197
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π SIMILAR VOLUMES
High-quality GaN/InGaN multiple quantum wells (MQWs) were fabricated on nano-scale epitaxial lateral overgrown (NELO) GaN layers. To grow the NELO layer first a 200 nm-thick SiO 2 was deposited on a 2 mmthick undoped GaN layer. A 10 nm-thick Ni layer was then deposited on the SiO 2 film followed by
## Abstract We report on the optical properties of a series of nonβpolar __a__βplane InGaN/GaN multiple quantum well (QW) structures of constant well width and varying indium concentration. The emission spectrum is dominated by recombination at regions of the QW intersected by basal plane stacking