✦ LIBER ✦

Epitaxial lateral overgrowth of InGaN/GaN multiple quantum wells on HVPE GaN template

✍ Scribed by Xingbin Li; Tongjun Yu; Yuebin Tao; Junjing Deng; Chenglong Xu; Guoyi Zhang

Book ID: 112182288
Publisher: John Wiley and Sons
Year: 2011
Tongue: English
Weight: 333 KB
Volume: 9
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.201100409

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Investigation of Emission Polarization a

Investigation of Emission Polarization and Strain in InGaN–GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates

✍ Huei-Min Huang; Tien-Chang Lu; Chiao-Yun Chang; Shih-Chun Ling; Wei-Wen Chan; Ha 📂 Article 📅 2011 🏛 Optical Society of America 🌐 English ⚖ 715 KB

Optical Properties of A-Plane InGaN/GaN

Optical Properties of A-Plane InGaN/GaN Multiple Quantum Wells Grown on Nanorod Lateral Overgrowth Templates

✍ Huei-Min Huang; Shih-Chun Ling; Wei-Wen Chan; Tien-Chang Lu; Hao-Chung Kuo; Shin 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 681 KB

InGaN/GaN quantum well growth on pyramid

InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN

✍ X. Zhang; P. D. Dapkus; D. H. Rich; I. Kim; J. T. Kobayashi; N. P. Kobayashi 📂 Article 📅 2000 🏛 Springer US 🌐 English ⚖ 356 KB

Selective epitaxy of InGaN/GaN multiple

Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets

✍ G.F. Yang; P. Chen; M.Y. Wang; Z.G. Yu; B. Liu; Z.L. Xie; X.Q. Xiu; Z.L. Wu; F. 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 869 KB

Emission mechanisms of bulk GaN and InGa

Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

✍ Chichibu, S. F.; Marchand, H.; Minsky, M. S.; Keller, S.; Fini, P. T.; Ibbetson, 📂 Article 📅 1999 🏛 American Institute of Physics 🌐 English ⚖ 282 KB

Characterization of GaN/InGaN multiple q

Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique

✍ W.K. Fong; K.K. Leung; Charles Surya 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 455 KB

High-quality GaN/InGaN multiple quantum wells (MQWs) were fabricated on nano-scale epitaxial lateral overgrown (NELO) GaN layers. To grow the NELO layer first a 200 nm-thick SiO 2 was deposited on a 2 mmthick undoped GaN layer. A 10 nm-thick Ni layer was then deposited on the SiO 2 film followed by