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Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

✍ Scribed by Chichibu, S. F.; Marchand, H.; Minsky, M. S.; Keller, S.; Fini, P. T.; Ibbetson, J. P.; Fleischer, S. B.; Speck, J. S.; Bowers, J. E.; Hu, E.; Mishra, U. K.; DenBaars, S. P.; Deguchi, T.; Sota, T.; Nakamura, S.

Book ID
120501823
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
282 KB
Volume
74
Category
Article
ISSN
0003-6951

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