## Abstract Multiβquantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the ch
β¦ LIBER β¦
InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN
β Scribed by X. Zhang; P. D. Dapkus; D. H. Rich; I. Kim; J. T. Kobayashi; N. P. Kobayashi
- Book ID
- 107452440
- Publisher
- Springer US
- Year
- 2000
- Tongue
- English
- Weight
- 356 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0361-5235
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