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Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate

✍ Scribed by Sung-Nam Lee; H.S. Paek; J.K. Son; T. Sakong; E. Yoon; O.H. Nam; Y. Park


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
307 KB
Volume
376-377
Category
Article
ISSN
0921-4526

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Growth and Characterization of InGaN/GaN
✍ X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 101 KB πŸ‘ 2 views

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t