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Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties

✍ Scribed by Polyakov, Alexander ;Govorkov, Anatoliy ;Smirnov, Nikolay ;Markov, Alexander ;Lee, In-Hwan ;Ahn, Haeng-Keun ;Karpov, Sergey ;Pearton, Stephen

Book ID
105365798
Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
195 KB
Volume
207
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Multi‐quantum well (MQW) GaN/InGaN structures prepared by epitaxial lateral overgrowth were characterized by various techniques to better understand the difference of the materials properties and heterostructure operation in the wing and window regions. Detailed interpretation of the characterization data is given, invoking quantum‐mechanical simulation of the grown heterostructures.

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Investigation of the Optical Properties
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✍ T. Wang; D. Nakagawa; M. Lachab; T. Sugahara; S. Saki πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 223 KB πŸ‘ 3 views

The paper investigates the optical properties of InGaN/GaN single quantum well and multiple quantum well structures. For the multiple quantum well structure, we investigated the thickness dependence of the optical properties. Based on these studies, this paper presents 1. for the single quantum well