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Electrical properties and luminescence spectra of light-emitting diodes based on InGaN/GaN heterostructures with modulation-doped quantum wells

✍ Scribed by S. S. Mamakin; A. É. Yunovich; A. B. Wattana; F. I. Manyakhin

Book ID
110135531
Publisher
Springer
Year
2003
Tongue
English
Weight
111 KB
Volume
37
Category
Article
ISSN
1063-7826

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Spectra and quantum efficiency h e of green LEDs based on heterostructures InGaN/AlGaN/GaN with multiple quantum wells were studied at currents J = 10 ± ±6 to 10 ± ±1 A. Minor differences in h e (of AE10% at J % 10 mA) are caused by sufficiently different distributions of effective charges in the sp