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Effect of well profile on optical and structural properties in InGaN/GaN quantum wells and light emitting diodes

✍ Scribed by Shim, H. W. ;Suh, E.-K. ;Hong, C.-H. ;Kim, Y.-W. ;Lee, H. J.

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 124 KB
Volume: 200
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200303328

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