Response speed and optical investigation of inGaN/gaN multiple quantum well light-emitting diodes (LED)

✍ Scribed by Yosuke Morita; Koichi Wakita

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 231 KB
• Volume: 137
• Category: Article
• ISSN: 0424-7760
• DOI: 10.1002/eej.1094

✦ Synopsis

Abstract

Transmission experiments for a local area network (LAN) using blue‐light‐emitting diodes (LEDs) with InGaN/GaN multiple quantum well (MQW) and plastic optical fibers (POFs) have been conducted. Audio analog signals have been transmitted up to 1800 kHz, which corresponds to an optical 1.5 dB bandwidth of LED response. The response speed of these diodes has been investigated by varying the operating conditions: dc bias, pulse amplitude, and pulse shape. The LED rise time is reduced from 0.26 μs to 0.19 μs by changing the electrical pulse amplitude from 0.5 V to 1.2 V, whereas the fall time (0.20 μs) does not change. On the other hand, the fall time is reduced from 0.20 μs to 0.14 μs by adding negative pulses after the applied positive pulses. It is shown that the direct‐modulation speed of these diodes is limited by the time constant associated with device capacitance. Electroluminescence and photocurrent spectra of the LEDs were also investigated; blueshifts were observed for both peaks in the spectra. © 2001 Scripta Technica, Electr Eng Jpn, 137(3): 47–51, 2001