Deep-level transient spectroscopy studies of light-emitting diodes based on multiple-quantum-well InGaN/GaN structure

✍ Scribed by Mikhail M. Sobolev; Natalia M. Shmidt

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 227 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.08.268