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Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes

✍ Scribed by L. Rigutti; A. Castaldini; A. Cavallini

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 196 KB
Volume: 40
Category: Article
ISSN: 0026-2692
DOI: 10.1016/j.mejo.2008.07.030

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