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Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes

โœ Scribed by Park, Seoung-Hwan ;Ahn, Doyeol ;Koo, Bun-Hei ;Kim, Jong-Wook

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
350 KB
Volume
206
Category
Article
ISSN
0031-8965

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โœฆ Synopsis

Abstract

Electronic and optical properties of 440 and 530โ€‰nm staggered InGaN/InGaN/GaN quantumโ€well (QW) lightโ€emitting diodes are investigated using the multiband effectiveโ€mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure requires a slightly larger In composition than the conventional QW structure to obtain a given wavelength. The spontaneous emission is found to be improved with the inclusion of the staggered layer for QW structures with a relatively thick well width and the longer wavelength (ฮปโ€‰=โ€‰530โ€‰nm). On the other hand, in the case of QW structures with a relatively thin well width (L~w~โ€‰=โ€‰2โ€‰nm), the spontaneous emission peak is almost unaffected by a staggered layer.

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