InGaN/GaN self-organized quantum dots with density of (2 Γ 5) Γ 10 10 cm Γ 2 , internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristic
InGaN/GaN multi-quantum dot light-emitting diodes
β Scribed by L. W. Ji; Y. K. Su; S. J. Chang
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 155 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1862-6351
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