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Characteristics of InGaN/GaN Light-Emitting Diode with Si ?-Doped GaN Contact Layer

โœ Scribed by Jeon, S.-R. ;Jo, M.S. ;Humg, T.-V. ;Yang, G.M. ;Cho, H.K. ;Lee, J.Y. ;Hwang, S.W. ;Son, S.J.

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
87 KB
Volume
188
Category
Article
ISSN
0031-8965

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