## Abstract For the first time we demonstrate InGaN/GaN‐based nanorod light emitting diodes (LEDs) with both very good current–voltage (__I__–__V__) characteristics and significantly enhanced emission. Our LED nanorods are fabricated based on InGaN/GaN LED epiwafers commercially available using sel
✦ LIBER ✦
3D simulation of InGaN/GaN micro-ring light-emitting diodes
✍ Scribed by Yang Sheng; Oleksiy Shmatov; Z. M. Simon Li
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Weight
- 362 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0306-8919
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