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Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction

✍ Scribed by M. K. Öztürk; Yu Hongbo; B. Sarıkavak; S. Korçak; S. Özçelik; E. Özbay

Publisher
Springer US
Year
2009
Tongue
English
Weight
331 KB
Volume
21
Category
Article
ISSN
0957-4522

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## Abstract Ray‐tracing method is used to investigate the light extraction efficiency (LEE) of Bragg diffraction‐assisted GaN‐based light‐emitting diodes (LED's) with vertical sidewalls. The ray tracing is based on the analytical formulae of the LEE in the incoherent regime for LED model with infin