## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req
Investigation of blue InGaN light-emitting diodes with step-like quantum well
✍ Scribed by Miao-Chan Tsai; Sheng-Horng Yen; Yen-Kuang Kuo
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 611 KB
- Volume
- 104
- Category
- Article
- ISSN
- 1432-0630
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract Transmission experiments for a local area network (LAN) using blue‐light‐emitting diodes (LEDs) with InGaN/GaN multiple quantum well (MQW) and plastic optical fibers (POFs) have been conducted. Audio analog signals have been transmitted up to 1800 kHz, which corresponds to an optical 1.
## Abstract We demonstrated staggered InGaN quantum wells (QW) grown by metalorganic chemical vapor deposition (MOCVD) as improved active region for visible light emitters. Theoretical studies indicate that staggered InGaN QW with step‐function like In‐content in the well offers significantly impro
## Abstract The non‐polar m‐plane InGaN/GaN light‐emitting diodes (LEDs) grown by metal‐organic chemical vapor deposition (MOCVD) on LiAlO~2~(100) substrates were investigated. The structure of LEDs is composed by GaN p–n junction and five InGaN/GaN multiple quantum wells (MQWs). They emit blue or