Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well
Correlation of barrier material and quantum-well number for InGaN/(In)GaN blue light-emitting diodes
β Scribed by Chang, Jih-Yuan ;Kuo, Yen-Kuang ;Tsai, Miao-Chan
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 422 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract Transmission experiments for a local area network (LAN) using blueβlightβemitting diodes (LEDs) with InGaN/GaN multiple quantum well (MQW) and plastic optical fibers (POFs) have been conducted. Audio analog signals have been transmitted up to 1800 kHz, which corresponds to an optical 1.
## Abstract The nonβpolar mβplane InGaN/GaN lightβemitting diodes (LEDs) grown by metalβorganic chemical vapor deposition (MOCVD) on LiAlO~2~(100) substrates were investigated. The structure of LEDs is composed by GaN pβn junction and five InGaN/GaN multiple quantum wells (MQWs). They emit blue or