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Effect of Barrier Thickness and Barrier Doping on the Properties of InGaN/GaN Multiple-Quantum-Well Structure Light Emitting Diode

✍ Scribed by Tzong-Liang Tsai; Chih-Sung Chang; Tzer-Peng Chen; Kuo-Hsin Huang

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 77 KB
Volume: 0
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200390039

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