✦ LIBER ✦

Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm

✍ Scribed by Arif, Ronald A. ;Ee, Yik-Khoon ;Tansu, Nelson

Publisher: John Wiley and Sons
Year: 2008
Tongue: English
Weight: 294 KB
Volume: 205
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200777478

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✦ Synopsis

Abstract

We demonstrated staggered InGaN quantum wells (QW) grown by metalorganic chemical vapor deposition (MOCVD) as improved active region for visible light emitters. Theoretical studies indicate that staggered InGaN QW with step‐function like In‐content in the well offers significantly improved radiative recombination rate and optical gain, in comparison to the conventional InGaN QW. Experimental results of light emitting diode (LED) structure utilizing staggered InGaN QW show good agreement with theory. Staggered InGaN QW allows polarization engineering leading to improvement of photoluminescence intensity and LEDs output power as a result of enhanced radiative recombination rate. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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