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Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells

✍ Scribed by V. E. Kudryashov; A. N. Turkin; A. É. Yunovich; A. N. Kovalev; F. I. Manyakhin


Book ID
110120063
Publisher
Springer
Year
1999
Tongue
English
Weight
131 KB
Volume
33
Category
Article
ISSN
1063-7826

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Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well