𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

✍ Scribed by Cheng-Liang Wang; Ming-Chang Tsai; Jyh-Rong Gong; Wei-Tsai Liao; Ping-Yuan Lin; Kuo-Yi Yen; Chia-Chi Chang; Hsin-Yueh Lin; Shen-Kwang Hwang


Book ID
108215441
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
383 KB
Volume
138
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Properties of Quantum Well Excitons in G
✍ Chichibu, S. F. ;Deguchi, T. ;Sota, T. ;Wada, K. ;DenBaars, S. P. ;Mukai, T. ;Na πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 195 KB πŸ‘ 2 views

Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well

Response speed and optical investigation
✍ Yosuke Morita; Koichi Wakita πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 231 KB

## Abstract Transmission experiments for a local area network (LAN) using blue‐light‐emitting diodes (LEDs) with InGaN/GaN multiple quantum well (MQW) and plastic optical fibers (POFs) have been conducted. Audio analog signals have been transmitted up to 1800 kHz, which corresponds to an optical 1.