Properties of InGaN/GaN quantum wells and blue light emitting diodes
β Scribed by M.G Cheong; E.-K Suh; H.J Lee
- Book ID
- 108344397
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 534 KB
- Volume
- 99
- Category
- Article
- ISSN
- 0022-2313
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Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well
## Abstract Electronic and optical properties of 440 and 530βnm staggered InGaN/InGaN/GaN quantumβwell (QW) lightβemitting diodes are investigated using the multiband effectiveβmass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req