Temperature-dependent electroluminescence in InGaN/GaN multiple-quantum-well light-emitting diodes
β Scribed by X. A. Cao; S. F. Leboeuf; L. B. Rowland; H. Liu
- Book ID
- 107453018
- Publisher
- Springer US
- Year
- 2003
- Tongue
- English
- Weight
- 122 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0361-5235
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Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for
## Abstract Transmission experiments for a local area network (LAN) using blueβlightβemitting diodes (LEDs) with InGaN/GaN multiple quantum well (MQW) and plastic optical fibers (POFs) have been conducted. Audio analog signals have been transmitted up to 1800 kHz, which corresponds to an optical 1.