𝔖 Bobbio Scriptorium
✦   LIBER   ✦

InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

✍ Scribed by T. C. Wen; S. J. Chang; Y. K. Su; L. W. Wu; C. H. Kuo; W. C. Lai; J. K. Sheu; T. Y. Tsai


Book ID
107453035
Publisher
Springer US
Year
2003
Tongue
English
Weight
191 KB
Volume
32
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


InGaN Multiple-Quantum-Well Light Emitti
✍ Zhang, B.J. ;Egawa, T. ;Ishikawa, H. ;Nishikawa, N. ;Jimbo, T. ;Umeno, M. πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 89 KB πŸ‘ 2 views

Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for

Response speed and optical investigation
✍ Yosuke Morita; Koichi Wakita πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 231 KB

## Abstract Transmission experiments for a local area network (LAN) using blue‐light‐emitting diodes (LEDs) with InGaN/GaN multiple quantum well (MQW) and plastic optical fibers (POFs) have been conducted. Audio analog signals have been transmitted up to 1800 kHz, which corresponds to an optical 1.

Local internal quantum efficiency of a g
✍ J. Danhof; U. T. Schwarz; T. Meyer; C. Vierheilig; M. Peter πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 254 KB

## Abstract Excitation density‐dependent microphotoluminescence measurements were performed on a green light (515 nm) emitting InGaN/GaN multiquantum well sample of low threading dislocation density (5 × 10^7^ cm^βˆ’2^). For the observed structure we find a different shape of the local internal quant