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Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask

✍ Scribed by Sang-il Kim; Bumjoon Kim; Samseok Jang; A-young Kim; Jihun Park; Dongjin Byun

Book ID
104022361
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
791 KB
Volume
326
Category
Article
ISSN
0022-0248

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✦ Synopsis

Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography in the form of a stripe with an opening of 4 mm and a period of 16 mm. The stripe-patterned PR was annealed at 1000 1C in a H 2 atmosphere. The stripes were aligned parallel to the Β½11Γ€20 Al2 O3 direction. The ELO process of GaN was strongly dependent on the direction of the stripes. Overall, the PR masks on the sapphire substrate were carbonized during the heating step before the main growth, so that the carbonized PR mask acted as an ELO mask. The study results confirmed the promising potential of the ELO process using an in-situ carbonized PR mask as a single-step technique.

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✍ W.K. Fong; K.K. Leung; Charles Surya πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 455 KB

High-quality GaN/InGaN multiple quantum wells (MQWs) were fabricated on nano-scale epitaxial lateral overgrown (NELO) GaN layers. To grow the NELO layer first a 200 nm-thick SiO 2 was deposited on a 2 mmthick undoped GaN layer. A 10 nm-thick Ni layer was then deposited on the SiO 2 film followed by