𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Raman study of Epitaxial lateral Overgrowth of GaN on Patterned Sapphire Substrate

✍ Scribed by Kang, D.H.; Song, Jae Chul; Song, H.; Kim, Dong Wook; Lee, I.H.; Santhakumar, Kannappan; Lee, Cheul Ro

Book ID
124162259
Publisher
Trans Tech Publications, Ltd.
Year
2007
Tongue
English
Weight
371 KB
Volume
31
Category
Article
ISSN
1662-8958

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Epitaxial lateral overgrowth of AlN laye
Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates
✍ Nakano, K. ;Imura, M. ;Narita, G. ;Kitano, T. ;Hirose, Y. ;Fujimoto, N. ;Okada, πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 247 KB

## Abstract Epitaxial lateral overgrowth (ELO) of low‐dislocation‐density AlN layers on trench‐patterned sapphire substrates is demonstrated for the first time. Sapphire (0001) substrates with trench patterns formed along two different directions, γ€ˆ10$ 10 \bar 10 $0〉 and γ€ˆ11$ 11 \bar 20 $0〉, were u

Epitaxial lateral overgrowth of GaN on s
Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask
✍ Sang-il Kim; Bumjoon Kim; Samseok Jang; A-young Kim; Jihun Park; Dongjin Byun πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 791 KB

Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography i