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Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy

✍ Scribed by Newman, Scott A.; Kamber, Derrick S.; Baker, Troy J.; Wu, Yuan; Wu, Feng; Chen, Zhen; Namakura, Shuji; Speck, James S.; DenBaars, Steven P.

Book ID
119948084
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
586 KB
Volume
94
Category
Article
ISSN
0003-6951

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Epitaxial lateral overgrowth of AlN laye
Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates
✍ Nakano, K. ;Imura, M. ;Narita, G. ;Kitano, T. ;Hirose, Y. ;Fujimoto, N. ;Okada, πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 247 KB

## Abstract Epitaxial lateral overgrowth (ELO) of low‐dislocation‐density AlN layers on trench‐patterned sapphire substrates is demonstrated for the first time. Sapphire (0001) substrates with trench patterns formed along two different directions, γ€ˆ10$ 10 \bar 10 $0〉 and γ€ˆ11$ 11 \bar 20 $0〉, were u