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Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

✍ Scribed by Chen, Z.; Qhalid Fareed, R. S.; Gaevski, M.; Adivarahan, V.; Yang, J. W.; Khan, Asif; Mei, J.; Ponce, F. A.

Book ID
120014874
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
577 KB
Volume
89
Category
Article
ISSN
0003-6951

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Epitaxial lateral overgrowth of AlN laye
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## Abstract Epitaxial lateral overgrowth (ELO) of low‐dislocation‐density AlN layers on trench‐patterned sapphire substrates is demonstrated for the first time. Sapphire (0001) substrates with trench patterns formed along two different directions, γ€ˆ10$ 10 \bar 10 $0〉 and γ€ˆ11$ 11 \bar 20 $0〉, were u