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High quality aluminum nitride epitaxial layers grown on sapphire substrates

✍ Scribed by Saxler, A.; Kung, P.; Sun, C. J.; Bigan, E.; Razeghi, M.


Book ID
119945227
Publisher
American Institute of Physics
Year
1994
Tongue
English
Weight
584 KB
Volume
64
Category
Article
ISSN
0003-6951

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Infrared reflectance analysis of GaN epi
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Infrared reflectance (IR) of GaN grown on sapphire and silicon substrates has been studied both theoretically and experimentally. The theoretical calculation of the IR spectra is based on the transfer matrix method. The IR spectral characteristics influenced by several factors, such as film thicknes