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Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates

✍ Scribed by Mei, J.; Ponce, F. A.; Fareed, R. S. Qhalid; Yang, J. W.; Khan, M. Asif


Book ID
120015556
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
521 KB
Volume
90
Category
Article
ISSN
0003-6951

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