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No mask epitaxial lateral overgrowth of gallium nitride on sapphire

✍ Scribed by Wei Zhang; Qiuyan Hao; Caichi Liu; Yuchun Feng

Book ID
116602087
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
912 KB
Volume
456
Category
Article
ISSN
0925-8388

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Epitaxial lateral overgrowth of GaN on s
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Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography i

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## Abstract Epitaxial lateral overgrowth (ELO) of low‐dislocation‐density AlN layers on trench‐patterned sapphire substrates is demonstrated for the first time. Sapphire (0001) substrates with trench patterns formed along two different directions, γ€ˆ10$ 10 \bar 10 $0〉 and γ€ˆ11$ 11 \bar 20 $0〉, were u