Control of crystallinity of GaN grown on sapphire substrate by metalorganic vapor phase epitaxy using in situ X-ray diffraction monitoring method

✍ Scribed by Iwaya, Motoaki; Yamamoto, Taiji; Tanaka, Daiki; Iida, Daisuke; Kamiyama, Satoshi; Takeuchi, Tetsuya; Akasaki, Isamu

• Book ID: 122177508
• Publisher: Elsevier Science
• Year: 2014
• Tongue: English
• Weight: 762 KB
• Volume: 401
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2013.11.010