Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth

✍ Scribed by Iida, Daisuke; Kondo, Yasunari; Sowa, Mihoko; Sugiyama, Toru; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

• Book ID: 120052663
• Publisher: John Wiley and Sons
• Year: 2013
• Tongue: English
• Weight: 469 KB
• Volume: 7
• Category: Article
• ISSN: 1862-6254
• DOI: 10.1002/pssr.201307023