Epitaxial Lateral Overgrowth of GaN on Sapphire - An Examination of Epitaxy Quality Using Synchrotron X-Ray Topography

✍ Scribed by McNally, P.J. ;Tuomi, T. ;Lowney, D. ;Jacobs, K. ;Danilewsky, A.N. ;Rantam�ki, R. ;O'Hare, M. ;Considine, L.

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 229 KB
• Volume: 185
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200106)185:2<373::aid-pssa373>3.0.co;2-h

✦ Synopsis

a), T. Tuomi (b), D. Lowney 1 ) (a), K. Jacobs (c), A.N. Danilewsky (d), R. Rantama ¨ki (b), M. O'Hare (a), and L. Considine (e)